OXIDATION OF PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE AND OXYNITRIDE FILMS

被引：11

作者：

DENISSE, CMM

SMULDERS, HE

HABRAKEN, FHPM

VANDERWEG, WF

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90417-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：25 / 32

页数：8

共 8 条

[1] PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J].

DENISSE, CMM ;

TROOST, KZ ;

ELFERINK, JBO ;

HABRAKEN, FHPM ;

VANDEWEG, WF ;

HENDRIKS, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2536-2542

[2] ANNEALING OF PLASMA SILICON OXYNITRIDE FILMS [J].

DENISSE, CMM ;

TROOST, KZ ;

HABRAKEN, FHPM ;

VANDERWEG, WF ;

HENDRIKS, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2543-2547

[3] HYDROGEN IN OXIDIZED SILICON OXYNITRIDE THIN-FILMS [J].

ELFERINK, JBO ;

HABRAKEN, FHPM ;

VANDERWEG, WF ;

KUIPER, AET .

APPLIED SURFACE SCIENCE, 1988, 33-4 :765-772

[4] HYDROGEN IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON (OXY)NITRIDE FILMS [J].

HABRAKEN, FHPM ;

TIJHAAR, RHG ;

VANDERWEG, WF ;

KUIPER, AET ;

WILLEMSEN, MFC .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :447-453

[5]

KAINASKII S, 1960, OGNEUPORY, V25, P175

[6] OXIDATION BEHAVIOR OF LPCVD SILICON OXYNITRIDE FILMS [J].

KUIPER, AET ;

WILLEMSEN, MFC ;

BAX, JMG ;

HABRAKEN, FHPH .

APPLIED SURFACE SCIENCE, 1988, 33-4 :757-764

[7]

KUIPER AET, 1989, J VACUUM SCI TEC JUN

[8] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

LANFORD, WA ;

RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477

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