NUCLEATION AND GROWTH-PROCESSES IN THIN-FILM FORMATION

被引:71
作者
VENABLES, JA [1 ]
机构
[1] UNIV SUSSEX,SCH MATH & PHYS SCI,BRIGHTON BN1 9QH,E SUSSEX,ENGLAND
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期
关键词
D O I
10.1116/1.583528
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:870 / 873
页数:4
相关论文
共 19 条
[1]   KINETIC PROCESSES IN MOLECULAR-BEAM EPITAXY GROWTH OF III-V MATERIALS [J].
FOXON, CT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :867-869
[2]   HETEROGENEOUS NUCLEATION ON CLEAVAGE STEPS .1. THEORY [J].
GATES, AD ;
ROBINS, JL .
SURFACE SCIENCE, 1982, 116 (02) :188-204
[3]   NUCLEATION, GROWTH AND THE INTERMEDIATE LAYER IN AG/SI(100) AND AG SI(111) [J].
HANBUCKEN, M ;
FUTAMOTO, M ;
VENABLES, JA .
SURFACE SCIENCE, 1984, 147 (2-3) :433-450
[4]   HETEROGENEOUS NUCLEATION AND GROWTH OF THIN-FILMS [J].
HARSDORFF, M .
THIN SOLID FILMS, 1982, 90 (01) :1-14
[6]   NUCLEATION AND GROWTH IN SYSTEM AG-MO(100) - COMPARISON OF UHV-SEM AND AES-LEED OBSERVATIONS [J].
HARTIG, K ;
JANSSEN, AP ;
VENABLES, JA .
SURFACE SCIENCE, 1978, 74 (01) :69-78
[7]   CRYSTAL-GROWTH AND MICROSTRUCTURES OF SOLID KRYPTON AND XENON [J].
KEYSE, RJ ;
VENABLES, JA .
JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) :525-537
[8]   COHESIVE ENERGY OF 2-DIMENSIONAL SI(111)-3 X 1 AG AND SI(111)SQUARE ROOT 3-R(30-DEGREES)AG PHASES OF SILVER (DEPOSIT)-SILICON(111) (SUBSTRATE) SYSTEM [J].
LELAY, G ;
MANNEVILLE, M ;
KERN, R .
SURFACE SCIENCE, 1978, 72 (02) :405-422
[9]   PROBLEMS AND PROGRESS IN DESCRIBING QUANTITATIVELY THE DEVELOPMENT OF THIN-FILM DEPOSITS [J].
ROBINS, JL .
SURFACE SCIENCE, 1979, 86 (JUL) :1-13
[10]   UHV-SEM STUDY OF THE NUCLEATION AND GROWTH OF AG/W(110) [J].
SPILLER, GDT ;
AKHTER, P ;
VENABLES, JA .
SURFACE SCIENCE, 1983, 131 (2-3) :517-533