ANALYSIS OF WATER FUSING FOR 1.3 MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：21

作者：

RAM, RJ ^{[1
]}

YANG, L ^{[1
]}

NAUKA, K ^{[1
]}

HOUNG, YM ^{[1
]}

LUDOWISE, M ^{[1
]}

MARS, DE ^{[1
]}

DUDLEY, JJ ^{[1
]}

WANG, SY ^{[1
]}

机构：

[1] HEWLETT PACKARD CORP,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 20期

关键词：

D O I：

10.1063/1.109323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report low densities of electrically active defects and low optical losses at the wafer fused interface between InP and GaAs. Electron beam induced current analysis shows electrically active defects with an average spacing of 4.5 mum at the interface and significantly lower densities 0.4 mum from the fused interface. Optical measurements of a Fabry-Perot resonator made by fusing an InP epilayer to a GaAs/AlAs mirror demonstrate a 3% increase in mirror transmission after fusing and negligible absorption at the fused interface. Based on these results, we present design considerations for fused surface emitting lasers.

引用

页码：2474 / 2476

页数：3

共 6 条

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