Electrical, optical and photoelectrochemical properties of natural enargite, Cu3AsS4

被引：37

作者：

Pauporte, T

Lincot, D

机构：

[1] Laboratoire D'electrochimie Et de Chimie Analytique, Unité Associée Au Cnrs, Ecole Nationale Supérieure de Chimie de Paris, Paris, F-75231

来源：

ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS | 1995年 / 5卷 / 06期

关键词：

natural enargite; semiconductor material; electrical and optical properties; photoelectrochemistry;

D O I：

10.1002/amo.860050602

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

The semiconducting properties of natural samples of enargite, a copper and arsenic sulphide (Cu3AsS4), have been studied, They have been found to be p-type semiconductors with a resistivity of about 7 Omega cm, a doping level of about 10(17) cm(-3) and a mobility of 9 cm(2)V(-1) s(-1) The variation of the resistivity as a function of temperature allows to determine an activation energy of 0.11 eV, Two optical transitions have been determined, an indirect one at 1.19 eV and a direct one at 1.44 eV. The samples, mounted as working electrodes in a photoelectrochemical set-up, are photosensitive and behave as p-type photocathodes, The two transitions are found again from the analysis of photocurrent spectra, The direct band gap value is close to the ideal value required for photovoltaic applications, However the quantum efficiencies obtained here are still low.

引用

页码：289 / 298

页数：10

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