LOW THRESHOLD CURRENT ALGAAS/GAAS DISTRIBUTED FEEDBACK LASER GROWN BY 2-STEP MOLECULAR-BEAM EPITAXY

被引：11

作者：

KOJIMA, K

NODA, S

MITSUNAGA, K

KYUMA, K

NAKAYAMA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.96074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：570 / 572

页数：3

共 10 条

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[3]

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[6] GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK DIODE LASERS [J].

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[7] CW OPERATION OF DISTRIBUTED-FEEDBACK GAAS-GAAIAS DIODE LASERS AT TEMPERATURES UP TO 300-K [J].

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[8]

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[9] LONGITUDINAL-MODE CHARACTERISTICS FOR 1.3-MU-M GAINASP-INP DFB LASERS JUST BELOW THE THRESHOLD CURRENT [J].

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UEMATSU, Y .

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[10] DISTRIBUTED-FEEDBACK SINGLE HETEROJUNCTION GAAS DIODE LASER [J].

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