MODELING OF PSEUDOMORPHIC ALGAAS/GAINAS/ALGAAS LAYERS USING SELFCONSISTENT APPROACH

被引：7

作者：

ALAMKAN, J

HAPPY, H

CORDIER, Y

CAPPY, A

机构：

[1] Centre Hyperfréquences et Semiconducteurs U.A. 287 CNRS - Båt. P4, Université des Sciences et Techniques, Villeneuve D'Ascq, 59655, de Lille Flandres Artois

来源：

EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS | 1990年 / 1卷 / 04期

关键词：

D O I：

10.1002/ett.4460010410

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

A study of pseudomorphic layers properties using a selfconsistent approach is presented. The strain effects are taken into account. Sheet carrier density and capacitance voltage characteristics are related to technological layer parameters. Simple expressions of subband energy well suited for CAD are then deduced.

引用

页码：429 / 432

页数：4

共 7 条

[1]

Smith P.M., Et al., (1988)

[2]

Thobel J.L., Et al., The electron transport properties of strained InxGa1‐xAs, Appl. Phy. Lett, 56, 4, pp. 346-348, (1990)

[3]

Stern F., Self‐consistent results for n‐type Si inversion layers, Phys. Rev. B, 5, 12, pp. 4891-4899, (1972)

[4]

Marzin J.Y., Et al., Optical investigation of a new type of valence band configuration in In, Ga, ‐ As‐GaAs strained superlattices, Phys. Rev. B, 31, 12, pp. 8298-8301, (1985)

[5]

Kuo C.P., Et al., Effect of mismatch strain on bandgap in III‐V semiconductors, J. Appl. Phys., 57, 12, pp. 5428-5432, (1985)

[6]

Adachi S., Material parameters of In1‐xGaxAsyP1‐yand related binaries, J. Appl. Phys., 53, 12, pp. 8772-8792, (1982)

[7]

Matthews J.W., Et al., Accomodation of Misfit Across the interface between crysrak of semiconducting elements or compounds, J. Appl. Phys., 41, 9, pp. 3800-3804, (1970)

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