IRRADIATION EFFECT ON ELECTRON-TRANSPORT THROUGH GAAIAS BARRIERS

被引：7

作者：

CHAABANE, H

BOURGOIN, JC

机构：

[1] Groupe de Physique des Solides, Universités Paris 6 et Paris 7, Centre National de la Recherche Scientifique, 75251 Paris Cedex 05, Tour 23

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.110952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of electron irradiation on the electronic transport through GaAlAs barriers has been studied. A drastic change in the current, voltage characteristics has been observed. At low-temperature scattering by the introduced defects induces tunneling via X band states. At high temperature the transport is dominated by electric field enhanced electron emission from defect levels.

引用

页码：1006 / 1008

页数：3

共 13 条

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