EFFECTS OF THRESHOLD SWITCHING AND MEMORY IN IN2TE3 THIN AMORPHOUS FILMS

被引：8

作者：

BALEVICIUS, S ^{[1
]}

CESNYS, A ^{[1
]}

DEKSNYS, A ^{[1
]}

机构：

[1] ACAD SCI LISSR,SEMICOND PHYS INST,VILNIUS,LISSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 32卷 / 01期

关键词：

D O I：

10.1002/pssa.2210320144

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K11 / &

共 11 条

[1]

AKHUNDOV GA, 1975, FTP, V9, P980

[2]

Akhundov GA, 1973, FIZ TEKH POLUPROV, V7, P1830

[3]

BULYARSKII SV, 1973, POLUPROVONDIKOVYE PR, P86

[4]

CESNYS A, 1968, Patent No. 280679

[5]

DEKSNIS AP, 1965, LITOV FIZ SB, V5, P377

[6]

Holmberg S. H., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P687

[7] THRESHOLD SWITCHING IN GALLIUM TELLURIDE SINGLE-CRYSTALS [J].

MILNE, WI ;

ANDERSON, JC .

[8]

PAULAVICIUS A, IN PRESS

[9]

PAULAVICIUS A, 1975, LIETUVOS FIZ RINK, V15, P5

ROMEO, N .