HOT-ELECTRON TRANSPORT IN GAAS IN THE PRESENCE OF A MAGNETIC-FIELD

被引：5

作者：

BETON, PH

LONG, AP

KELLY, MJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 18期

关键词：

D O I：

10.1063/1.98645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1425 / 1427

页数：3

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共 7 条

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[2] HOT-ELECTRON SPECTROSCOPY OF GAAS
HAYES, JR
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[3] MAGNETIC-FIELD DEPENDENCE OF HOT-ELECTRON TRANSPORT IN GAAS
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[4] DYNAMICS OF INJECTED ELECTRON COOLING IN GAAS
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[5] INJECTED-HOT-ELECTRON TRANSPORT IN GAAS
LEVI, AFJ
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WIEGMANN, W
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2071 - 2073
[6] Hot-electron transport in heavily doped GaAs
Long, AP
Beton, PH
Kelly, MJ
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) : 63 - 70
[7] HOT-ELECTRON TRANSPORT IN IN0.53GA0.47AS
LONG, AP
BETON, PH
KELLY, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 1842 - 1849