PASSIVATION OF THE GAAS SURFACE BY AN AMORPHOUS PHOSPHORUS OVERLAYER

被引：19

作者：

OLEGO, DJ

SCHACHTER, R

BAUMANN, JA

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.95042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1127 / 1129

页数：3

共 13 条

[1] RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES [J].

ASPNES, DE .

SURFACE SCIENCE, 1983, 132 (1-3) :406-421

[2] INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES [J].

BRUGGER, H ;

SCHAFFLER, F ;

ABSTREITER, G .

PHYSICAL REVIEW LETTERS, 1984, 52 (02) :141-144

[3] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].

CASEY, HC ;

BUEHLER, E .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249

[4] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS [J].

CASEY, HC ;

CHO, AY ;

LANG, DV ;

NICOLLIAN, EH ;

FOY, PW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3484-3491

[5] CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF A METAL/AL0.5GA0.5AS/GAAS CAPACITOR [J].

DRUMMOND, TJ ;

FISCHER, R ;

ARNOLD, D ;

MORKOC, H ;

SHUR, MS .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :214-216

[6]

JIANG DS, 1982, J APPL PHYS, V53, P999, DOI 10.1063/1.330581

[7] THE ELECTRICAL BEHAVIOR OF GAAS-INSULATOR INTERFACES - A DISCRETE ENERGY INTERFACE STATE MODEL [J].

KAZIOR, TE ;

LAGOWSKI, J ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2533-2539

[8] RAMAN EFFECT IN CRYSTALS [J].

LOUDON, R .

ADVANCES IN PHYSICS, 1964, 13 (52) :423-&

[9] REDUCTION OF GAAS SURFACE RECOMBINATION VELOCITY BY CHEMICAL TREATMENT [J].

NELSON, RJ ;

WILLIAMS, JS ;

LEAMY, HJ ;

MILLER, B ;

CASEY, HC ;

PARKINSON, BA ;

HELLER, A .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :76-79

[10] PHOTO-LUMINESCENCE IN HEAVILY DOPED GAAS .1. TEMPERATURE AND HOLE-CONCENTRATION DEPENDENCE [J].

OLEGO, D ;

CARDONA, M .

PHYSICAL REVIEW B, 1980, 22 (02) :886-893

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