THE INTRODUCTION OF MISFIT DISLOCATIONS IN HGCDTE EPITAXIAL LAYERS

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[2] CALCULATION OF ENERGY OF MISFIT DISLOCATIONS AND CRITICAL THICKNESS IN GRADED EPITAXIAL LAYERS [J]. THIN SOLID FILMS, 1977, 41 (03) : 307 - 314

[3] HARMAN TC, 1979, J ELECTRON MATER, V8, P191, DOI 10.1007/BF02663272

[4] Hellwege K. H., 1971, LANDOLTBORNSTEIN, VIII

[5] Hirth J.P., 1982, THEORY DISLOCATIONS

[6] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 1053 - +

[7] Kressel H., 1981, SEMICONDUCTORS SEMIM, V16

[8] LONG D, 1970, SEMICONDUCTORS SEMIM, V5

[9] MADELUNG O, 1982, LANDOLTBORNSTEIN B, V17

[10] MATTHEWS JW, 1975, EPITAXIAL GROWTH B

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[2] CALCULATION OF ENERGY OF MISFIT DISLOCATIONS AND CRITICAL THICKNESS IN GRADED EPITAXIAL LAYERS [J]. THIN SOLID FILMS, 1977, 41 (03) : 307 - 314

[3] HARMAN TC, 1979, J ELECTRON MATER, V8, P191, DOI 10.1007/BF02663272

[4] Hellwege K. H., 1971, LANDOLTBORNSTEIN, VIII

[5] Hirth J.P., 1982, THEORY DISLOCATIONS

[6] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 1053 - +

[7] Kressel H., 1981, SEMICONDUCTORS SEMIM, V16

[8] LONG D, 1970, SEMICONDUCTORS SEMIM, V5

[9] MADELUNG O, 1982, LANDOLTBORNSTEIN B, V17

[10] MATTHEWS JW, 1975, EPITAXIAL GROWTH B