SILICON CARBON COMPOSITE SHAPED-ARTICLE PRODUCTION USING THE 2-SHAPING-ELEMENTS (TSE) TECHNIQUE

被引:2
作者
BRANTOV, SK
GURZHIYANTS, PA
EPELBAUM, BM
机构
[1] Institute of Solid State Physics, Academy of Sciences of the USSR, Chernogolovka, Moscow
关键词
D O I
10.1016/0022-0248(90)90320-K
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A new method is described for growing shaped articles of silicon/carbon composites with controlled phase composition and mechanical properties. Graphite cloth and foil made from thermally splintered graphite are used as the substrate materials. © 1990.
引用
收藏
页码:126 / 129
页数:4
相关论文
共 2 条
[1]  
BRANTOV SK, 1988, IZV AN SSSR FIZ+, V52, P2029
[2]   SHAPED CRYSTAL-GROWTH USING 2 SHAPING ELEMENTS (TSE) - PHYSICAL FEATURES OF THE METHOD AND ITS APPLICATION TO SILICON CARBON COMPOSITE-MATERIALS PRODUCTION [J].
BRANTOV, SK ;
EPELBAUM, BM ;
TATARCHENKO, VA .
JOURNAL OF CRYSTAL GROWTH, 1987, 82 (1-2) :122-126