LOCALIZED STATES AT THE CONDUCTION-BAND EDGE OF AMORPHOUS-SILICON NITRIDE DETECTED BY RESONANCE PHOTOEMISSION

被引：23

作者：

LEY, L ^{[1
]}

KARCHER, R ^{[1
]}

JOHNSON, RL ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 53卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.53.710

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：710 / 713

页数：4

共 11 条

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[8]

LEY L, 1984, HYDROGENATED AMORPHO, V2, P61

[9]

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[10] RESONANT PHOTOEMISSION FROM SI - COMMENT [J].

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PHYSICAL REVIEW LETTERS, 1984, 52 (17) :1568-1568

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