ELECTROSTATIC SIMULATIONS FOR THE DESIGN OF SILICON STRIP DETECTORS AND FRONT-END ELECTRONICS

被引：30

作者：

SONNENBLICK, R

CARTIGLIA, N

HUBBARD, B

LESLIE, J

SADROZINSKI, HFW

SCHALK, T

机构：

[1] Santa Cruz Institute for Particle Physics, University of California, Santa Cruz

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1991年 / 310卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(91)91023-O

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report the first results from a simulation of the electrostatic properties of silicon microstrip detectors. We extract the capacitance and pulse shapes and show their importance for the design of front-end electronics and strip detector geometries for HERA and the SSC.

引用

页码：189 / 191

页数：3

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