EFFECT OF NONUNIFORM DOPING ON ELECTRICAL TRANSPORT IN TRANS-(CH)X - STUDIES OF THE SEMICONDUCTOR-METAL TRANSITION

被引：68

作者：

MOSES, D

DENENSTEIN, A

CHEN, J

HEEGER, AJ

MCANDREW, P

WOERNER, T

MACDIARMID, AG

PARK, YW

机构：

[1] UNIV PENN,RES STRUCT MATTER LAB,PHILADELPHIA,PA 19104

[2] UNIV PENN,DEPT CHEM,PHILADELPHIA,PA 19104

[3] SEOUL NATL UNIV,DEPT PHYS,SEOUL 151,SOUTH KOREA

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.25.7652

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7652 / 7660

页数：9

共 52 条

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