LOW-ENERGY ION INDUCED DAMAGE IN SILICON AT 50K

被引：40

作者：

THOMPSON, DA

WALKER, RS

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4M1,ONTARIO,CANADA

[2] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS | 1976年 / 132卷 / JAN-F期

关键词：

D O I：

10.1016/0029-554X(76)90746-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：281 / 284

页数：4

共 12 条

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[8] ENERGY DENSITY AND TIME CONSTANT OF HEAVY-ION INDUCED ELASTIC-COLLISION SPIKES IN SOLIDS [J].

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