HOMOGENEOUS DOPANT DISTRIBUTION OF SILICON CRYSTAL GROWN BY VERTICAL MAGNETIC FIELD-APPLIED CZOCHRALSKI METHOD

被引：39

作者：

HOSHIKAWA, K

KOHDA, H

HIRATA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 01期

关键词：

D O I：

10.1143/JJAP.23.L37

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L37 / L39

页数：3

共 10 条

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[2] RADIAL SOLUTE SEGREGATION IN CZOCHRALSKI GROWTH
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[3] FIEGL G, 1983, SOLID STATE TECH AUG, P121
[4] CZOCHRALSKI SILICON CRYSTAL-GROWTH IN THE VERTICAL MAGNETIC-FIELD
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L545 - L547
[5] Hoshikawa K., 1981, SEMICONDUCTOR SILICO, P101
[6] SUPPRESSION OF THERMAL-CONVECTION BY TRANSVERSE MAGNETIC-FIELD
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 427 - 429
[7] Kodera H., 1963, JAP J APPL PHYS, V2, P212, DOI [10.1143/JJAP.2.212, DOI 10.1143/JJAP.2.212]
[8] SUZUKI T, 1981, SEMICONDUCTOR SILICO, P90
[9] ELECTRICAL-RESISTIVITY OF UNDOPED GAAS SINGLE-CRYSTALS GROWN BY MAGNETIC-FIELD APPLIED LEC TECHNIQUE
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ORITO, F
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L325 - L327
[10] Witt A. F., 1970, J MATER SCI, V5, P882