THE EFFECT OF GROWTH PAUSE ON THE COMPOSITION OF INGAP/GAAS HETEROINTERFACES

被引：20

作者：

LEE, HY ^{[1
]}

HAFICH, MJ ^{[1
]}

ROBINSON, GY ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(90)90370-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Molecular beam epitaxial (MBE) growth of InGaP/GaAs quantum-well structures requires switching of the arsenic and phosphorus molecular beams at each heterointerface. Using in-situ reflection high energy electron diffraction and ex-situ X-ray diffraction, the effects of a growth pause on the interfacial abruptness and composition during gas-source MBE growth of InGaP/GaAs superlattices were determined. Under conditions of a smooth growth front, the InGaP-to-GaAs and GaAs-to-InGaP interfaces were found to contain well-defined, thin regions of altered growth-V composition. For long pause times, the growth front became rough and the superlattice exhibited random fluctuations in layer thickness. © 1990.

引用

页码：244 / 248

页数：5

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