INTEGRATED NPN/PNP GAAS/ALGAAS HBTS GROWN BY SELECTIVE MBE

被引：10

作者：

UMEMOTO, DK

VELEBIR, JR

KOBAYASHI, KW

OKI, AK

STREIT, DC

机构：

[1] TRW Electronics and Technology Division, Redondo Beach, CA

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 17期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; TRANSISTORS;

D O I：

10.1049/el:19910953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

npn and pnp GaAs/AlGaAs heterojunction bipolar transistors have been successfully fabricated on the same GaAs substrate using selective molecular beam epitaxy and a new merged HBT processing technology. The DC and microwave characteristics of the transistors are equivalent to those of similar HBTs grown by conventional MBE on separate GaAs substrates.

引用

页码：1517 / 1518

页数：2