NON-ADIABATIC CALCULATION OF BINDING-ENERGY OF EXCITON-NEUTRAL DONOR COMPLEX IN SEMICONDUCTORS

被引：17

作者：

MUNSCHY, G

CARABATOS, C

机构：

[1] UNIV LOUIS PASTEUR, INST PHYS, LAB PIERRE WEISS, STRASBOURG, FRANCE

[2] UNIV LOUIS PASTEUR, LAB SPECT & OPTIQUE CORPS SOLIDE, CNRS, STRASBOURG, FRANCE

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1973年 / 57卷 / 02期

关键词：

D O I：

10.1002/pssb.2220570210

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：523 / 533

页数：11

共 35 条

[1] BINDING-ENERGY OF 4-PARTICLE COMPLEXES IN SEMICONDUCTORS [J].

BEDNAREK, S ;

ADAMOWSKI, J .

PHYSICS LETTERS A, 1972, A 41 (04) :347-+

[2] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS [J].

BOGARDUS, EH ;

BEBB, HB .

PHYSICAL REVIEW, 1968, 176 (03) :993-&

[3]

Born M, 1927, ANN PHYS-BERLIN, V84, P0457

[4]

Born M., 1968, DYNAMICAL THEORY CRY

[5]

Chandrasekhar S, 1944, ASTROPHYS J, V100, P176, DOI 10.1086/144654

[6] OPTICAL PROPERTIES OF TELLURIUM AS AN ISOELECTRONIC TRAP IN CADMIUM SULFIDE [J].

CUTHBERT, JD ;

THOMAS, DG .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1573-&

[7] EXCITONS AND ABSORPTION EDGE OF ZNO [J].

DIETZ, RE ;

THOMAS, DG ;

HOPFIELD, JJ .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2282-&

[8] EXCITONS BOUND TO IONIZED IMPURITIES - CALCULATION OF BINDING ENERGIES OF EXCITON-IONIZED-DONOR COMPLEXES [J].

ELKOMOSS, SG .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10) :3411-+

[9] KOPPLUNG NICHTRELATIVISTISCHER TEILCHEN MIT EINEM QUANTISIERTEN FELD .1. DAS EXZITON IM SCHWINGENDEN, POLAREN KRISTALL [J].

HAKEN, H .

NUOVO CIMENTO, 1956, 3 (06) :1230-1253

[10]

HAKEN H, 1958, Z PHYS CHEM, V16, P218

← 1 2 3 4 →