ELECTRICALLY ERASABLE BURIED-GATE NONVOLATILE READ-ONLY MEMORY

被引：5

作者：

NEUGEBAUER, CA

BURGESS, JF

STEIN, L

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

[2] GE,CORP RES & DEV,SYRACUSE,NY 13201

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 05期

关键词：

D O I：

10.1109/T-ED.1977.18790

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：613 / 618

页数：6

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[6] ELECTRON TRAPPING IN THIN SIO2 FILMS DUE TO AVALANCHE CURRENTS [J].

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