STOP-CLEAVED INGAASP LASERS FOR MONOLITHIC OPTOELECTRONIC INTEGRATION

被引：5

作者：

ANTREASYAN, A

CHEN, CY

LOGAN, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 10期

关键词：

D O I：

10.1063/1.95821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：921 / 923

页数：3

共 10 条

[1]

BARCHAIM N, 1984, TOPICAL M INTEGRATED

[2] ALGAAS LASERS WITH MICRO-CLEAVED MIRRORS SUITABLE FOR MONOLITHIC INTEGRATION [J].

BLAUVELT, H ;

BARCHAIM, N ;

FEKETE, D ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :289-290

[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].

COLDREN, LA ;

IGA, K ;

MILLER, BI ;

RENTSCHLER, JA .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683

[4] MONOLITHIC INTEGRATION OF LASER AND AMPLIFIER-DETECTOR BY TWIN-GUIDE STRUCTURE [J].

KISHINO, K ;

SUEMATSU, Y ;

UTAKA, K ;

KAWANISHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (03) :589-590

[5] HIGH-QUANTUM-EFFICIENCY LOW-THRESHOLD MICROCLEAVED ALXGA1-XAS LASERS [J].

LEVINE, BF ;

VANDERZIEL, JP ;

LOGAN, RA ;

BETHEA, CG .

ELECTRONICS LETTERS, 1982, 18 (16) :690-691

[6]

LEVINE BF, COMMUNICATION

[7]

MATSUEDA H, 1983, J LIGHTWAVE TECHNOL, V1, P261

[8] GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING [J].

MERZ, JL ;

LOGAN, RA ;

SERGENT, AM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) :72-82

[9] VERY HIGH-FREQUENCY GAALAS LASER FIELD-EFFECT TRANSISTOR MONOLITHIC INTEGRATED-CIRCUIT [J].

URY, I ;

LAU, KY ;

BARCHAIM, N ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :126-128

[10] ALGAAS/GAAS MICROCLEAVED FACET (MCF) LASER MONOLITHICALLY INTEGRATED WITH PHOTO-DIODE [J].

WADA, O ;

YAMAKOSHI, S ;

FUJII, T ;

HIYAMIZU, S ;

SAKURAI, T .

ELECTRONICS LETTERS, 1982, 18 (05) :189-190

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