ELECTRICAL-PROPERTIES OF N-N ZNSE/GAAS HETEROJUNCTIONS

被引：7

作者：

BAWOLEK, EJ

WESSELS, BW

机构：

[1] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201

[2] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201

来源：

THIN SOLID FILMS | 1985年 / 131卷 / 3-4期

关键词：

D O I：

10.1016/0040-6090(85)90138-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：173 / 183

页数：11

共 20 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2] OPTICAL-PROPERTIES OF DEEP CENTERS IN SEMI-INSULATING ZNSE [J].

BAWOLEK, EJ ;

WESSELS, BW .

THIN SOLID FILMS, 1983, 102 (03) :251-258

[3]

BAWOLEK EJ, 1982, WORKSHOP DIELECTRIC

[4] PHOTO-VOLTAIC PROPERTIES OF ZNSE-GAAS HETEROJUNCTIONS [J].

BESOMI, P ;

CHRISTIANSON, K ;

WESSELS, BW .

THIN SOLID FILMS, 1982, 87 (02) :113-118

[5] GROWTH AND CHARACTERIZATION OF HETERO-EPITAXIAL ZINC SELENIDE [J].

BESOMI, P ;

WESSELS, BW .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :477-484

[6]

BESOMI P, 1981, APPL PHYS LETT, V37, P955

[7] LATTICE-MATCHED HETEROSTRUCTURES AS SCHOTTKY BARRIERS - HGSE-CDSE [J].

BEST, JS ;

MCCALDIN, JO .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1130-1133

[8] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[9] PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES [J].

FRENSLEY, WR ;

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :810-815

[10]

GAUGASH PV, 1976, SOV PHYS SEMICOND, V9, P1239

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