Study of RF sputtered a-Si:H and a-Ge:H by photothermal deflection spectroscopy

被引：2

作者：

Rovira, PI

Alvarez, F

机构：

[1] Instituto de Fisica “Gleb Wataghin”, Universidade Estadual de Campinas

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1995年 / 192卷 / 02期

关键词：

D O I：

10.1002/pssb.2221920222

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of hydrogenation in radio-frequency (rf) sputtered a-Si:H and a-Ge:H films is studied. Photothermal deflection spectroscopy is used to study the evolution of the sample quality on hydrogen incorporation. The influence of the substrate temperature, target bias, and hydrogen partial pressure on the sub-gap absorption coefficient and on the hydrogen incorporated in the films is reported.

引用

页码：535 / 541

页数：7

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