PROPERTIES OF PROFILED SEMICONDUCTOR SINGLE-CRYSTALS GROWN BY STEPANOVS METHOD

[1] ANTONOV PI, 1972, IZV AN SSSR FIZ+, V36, P501

[2] ANTONOV PI, 1972, P C STRUCTURE DEFECT

[3] KOPTEV YI, 1968, 1 P C OBT SEM SINGL, P74

[4] NOSOV JG, 1973, IZV AKAD NAUK SSSR F, V37, P2334

[5] STEPANOV AV, 1963, BUDUSHEE METALLOOBRA

[6] TATARCHENKO VA, 1969, IZV AKAD NAUK SSSR F, V33, P83

[7] Tsivinskii S.V., 1962, INZH FIZ ZH, V5, P59

[8] TSIVINSKII SV, 1972, SOVIET PHYS TECHN, V40, P372

[9] 1972, IZV AKAD NAUK SSSR F, V36

[10] 1969, IZV AKAD NAUK SSSR F, V33

[1] ANTONOV PI, 1972, IZV AN SSSR FIZ+, V36, P501

[2] ANTONOV PI, 1972, P C STRUCTURE DEFECT

[3] KOPTEV YI, 1968, 1 P C OBT SEM SINGL, P74

[4] NOSOV JG, 1973, IZV AKAD NAUK SSSR F, V37, P2334

[5] STEPANOV AV, 1963, BUDUSHEE METALLOOBRA

[6] TATARCHENKO VA, 1969, IZV AKAD NAUK SSSR F, V33, P83

[7] Tsivinskii S.V., 1962, INZH FIZ ZH, V5, P59

[8] TSIVINSKII SV, 1972, SOVIET PHYS TECHN, V40, P372

[9] 1972, IZV AKAD NAUK SSSR F, V36

[10] 1969, IZV AKAD NAUK SSSR F, V33