FERROELECTRIC IMAGE MEMORY

被引：19

作者：

MICHERON, F ^{[1
]}

ROUCHON, JM ^{[1
]}

VERGNOLLE, M ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

FERROELECTRICS | 1976年 / 10卷 / 1-4期

关键词：

D O I：

10.1080/00150197608241942

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：15 / 18

页数：4

共 12 条

[1] LARGE POLARIZATION-DEPENDENT PHOTOVOLTAGES IN CERAMIC BATIO3 + 5WT PERCENT CATIO3 [J].

BRODY, PS .

SOLID STATE COMMUNICATIONS, 1973, 12 (07) :673-676

[2] OPTICALLY INDUCED CHANGE OF REFRACTIVE INDICES IN LINBO3 AND LITAO3 [J].

CHEN, FS .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3389-&

[3] HIGH-VOLTAGE BULK PHOTOVOLTAIC EFFECT AND THE PHOTOREFRACTIVE PROCESS IN LINBO3 [J].

GLASS, AM ;

LINDE, DVD ;

NEGRAN, TJ .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :233-235

[4] LASER STUDY OF REVERSIBLE NUCLEATION SITES IN TRIGLYCINE SULFATE AND APPLICATIONS TO PYROELECTRIC DETECTORS [J].

HADNI, A ;

THOMAS, R .

FERROELECTRICS, 1972, 4 (01) :39-&

[5] TEMPERATURE DEPENDENCE OF FERROELECTRIC FIELD-EFFECT IN TE FILMS ON TGS SUBSTRATES [J].

HETZLER, U ;

RUPPEL, W ;

WURFEL, P .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 50 (02) :K85-&

[6] EQUIVALENT CIRCUIT ANALYSIS OF A FERROELECTRIC-PHOTOCONDUCTOR MEMORY DEVICE [J].

JACOBS, JT ;

SILVERMAN, BD ;

BATRA, IP .

FERROELECTRICS, 1972, 3 (2-3-) :177-+

[7]

KENNEMAN SA, 1970, APPL OPTICS, V9, P2279

[8] REFLECTIVE-MODE FERROELECTRIC-PHOTOCONDUCTOR IMAGE STORAGE AND DISPLAY DEVICES [J].

LAND, CE ;

SMITH, WD .

APPLIED PHYSICS LETTERS, 1973, 23 (02) :57-59

[9] STRAIN-BIASED FERROELECTRIC-PHOTOCONDUCTOR IMAGE STORAGE AND DISPLAY DEVICES [J].

MALDONADO, JR ;

MEITZLER, AH .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (03) :368-+

[10]

PEACOCK RV, 1959, THESIS LONDON U

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