ELECTRO-OPTIC EFFECTS IN THE OPTICAL ANISOTROPIES OF (001) GAAS

被引：122

作者：

ACOSTAORTIZ, SE

LASTRASMARTINEZ, A

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.40.1426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1426 / 1429

页数：4

共 16 条

[1] MEASUREMENTS OF ABOVE-BANDGAP OPTICAL ANISOTROPIES IN THE (001) SURFACE OF GAAS
ACOSTAORTIZ, SE
LASTRASMARTINEZ, A
[J]. SOLID STATE COMMUNICATIONS, 1987, 64 (05) : 809 - 811
[2] Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109
[3] ANISOTROPIES IN THE ABOVE BAND-GAP OPTICAL-SPECTRA OF CUBIC SEMICONDUCTORS
ASPNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (17) : 1956 - 1959
[4] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001)
ASPNES, DE
HARBISON, JP
STUDNA, AA
FLOREZ, LT
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1687 - 1690
[5] ABOVE-BANDGAP OPTICAL ANISOTROPIES IN THE REFLECTANCE SPECTRA OF SOME CUBIC SEMICONDUCTORS
ASPNES, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1138 - 1141
[6] REFLECTANCE DIFFERENCE SPECTROSCOPY OF GAAS(110) AND INP(110)
ASPNES, DE
STUDNA, AA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 546 - 549
[7] ABOVE-BANDGAP OPTICAL ANISOTROPIES IN CUBIC SEMICONDUCTORS - A VISIBLE NEAR ULTRAVIOLET PROBE OF SURFACES
ASPNES, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1498 - 1506
[8] ASPNES DE, 1987, MATER RES SOC S P, V91, P57
[9] BERKOVITS VL, 1986, SOV PHYS SEMICOND+, V20, P654
[10] CARDONA M, 1966, J PHYS SOC JPN, VS 21, P89