SINGLE HETEROSTRUCTURE ALXGA1-XAS PHASE MODULATOR WITH SNO2-DOPED IN2O3 CLADDING LAYER

被引：12

作者：

REINHART, FK ^{[1
]}

SINCLAIR, WR ^{[1
]}

LOGAN, RA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 01期

关键词：

D O I：

10.1063/1.88880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：21 / 23

页数：3

共 12 条

[1] GAAS ELECTRO-OPTIC DIRECTIONAL-COUPLER SWITCH
CAMPBELL, JC
BLUM, FA
SHAW, DW
LAWLEY, KL
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 202 - 205
[2] HIGHLY CONDUCTIVE, TRANSPARENT FILMS OF SPUTTERED IN2-XSNXO3-Y
FRASER, DB
COOK, HD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1368 - &
[3] PROPAGATION LOSSES IN METAL-FILM-SUBSTRATE OPTICAL WAVEGUIDES
GARMIRE, EM
STOLL, H
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (10) : 763 - +
[4] OPTICAL AND ELECTRICAL PROPERTIES OF DOPED IN2O3 FILMS
KOSTLIN, H
JOST, R
LEMS, W
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01): : 87 - 93
[5] ALXGA1-X AS DOUBLE-HETEROSTRUCTURE RIB-WAVEGUIDE INJECTION LASER
LEE, TP
BURRUS, CA
MILLER, BI
LOGAN, RA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 432 - 435
[6] DOUBLE-HETEROSTRUCTURE GAAS-AL-XGA-1-XAS [110] P-N-JUNCTION-DIODE MODULATOR
MCKENNA, J
REINHART, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2069 - 2078
[7] LASER OSCILLATION IN EPITAXIAL GAAS WAVEGUIDES WITH CORRUGATION FEEDBACK
NAKAMURA, M
YEN, HW
YARIV, A
GARMIRE, E
SOMEKH, S
GARVIN, HL
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 224 - 225
[8] TRANSMISSION PROPERTIES OF RIB WAVEGUIDES FORMED BY ANODIZATION OF EPITAXIAL GAAS ON ALXGA1-X AS LAYERS
REINHART, FK
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (06) : 270 - 272
[9] MODE REFLECTIVITY ANS WAVEGUIDE PROPERTIES OF DOUBLE-HETEROSTRUCTUREINJECTION LASERS
REINHART, FK
HAYASHI, I
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4466 - &
[10] REINHART FK, 1974, TOPICAL M INTEGRATED

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