LASRGAO4 SUBSTRATE FOR EPITAXIAL HIGH-T-C SUPERCONDUCTING THIN-FILMS

被引：20

作者：

NAKAMURA, K

KATUNO, R

AOYAMA, I

机构：

[1] Komatsu Ltd. Material Laboratory

来源：

PHASE TRANSITIONS | 1993年 / 42卷 / 1-2期

关键词：

LASRGAO4; YBCO; THIN FILMS; CRYSTAL GROWTH;

D O I：

10.1080/01411599308203500

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have shown lanthanum strontium gallate (LaSrGaO4) has considerable potential as a substrate material for high-temperature superconducting thin films. We report on the growth and physical properties of LaSrGaO4 crystal. Single crystals of LaSrGaO4 have been grown by the Czochralski technique with diameter 32 mm and lengths of 110 mm. We found that this crystal had no structural phase transitions and was twin-free. We show that high-quality epitaxial Y-Ba-Cu-O films can be grown on LaSrGaO4.

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页码：99 / 102

页数：4

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