TREATMENT OF IONIZED IMPURITY SCATTERING IN DEGENERATE SEMICONDUCTORS - COMBINATION OF VARIATIONAL AND PERTURBATIONAL TECHNIQUE IN PARTIAL-WAVE METHOD

被引：18

作者：

CSAVINSZKY, P

机构：

来源：

PHYSICAL REVIEW | 1963年 / 131卷 / 05期

关键词：

D O I：

10.1103/PhysRev.131.2033

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2033 / &

共 9 条

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[2] TREATMENT OF IONIZED IMPURITY SCATTERING IN DEGENERATE SEMICONDUCTORS - APPLICATION OF VARIATIONAL TECHNIQUE IN PARTIAL-WAVE METHOD
CSAVINSZKY, P
[J]. PHYSICAL REVIEW, 1962, 126 (04): : 1436 - &
[3] DINGLE RB, 1955, PHILOS MAG, V46, P831
[4] KOENIG SH, 1962, P INT C PHYSICS SEMI, P10
[5] SCATTERING OF CHARGE CARRIERS FROM POINT IMPERFECTIONS IN SEMICONDUCTORS
MORIMOTO, T
TANI, K
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (07) : 1121 - &
[6] MOTT NF, 1949, THEORY ATOMIC COLLIS, P127
[7] SCHIFF LI, 1955, QUANTUM MECHANICS, P105
[8] SCHIFF LI, 1955, QUANTUM MECHANICS, P167
[9] WEISER K, 1961, B AM PHYS SOC, V6, P156