TRANSITION-METAL CONTACTS TO ATOMICALLY CLEAN SILICON

被引：46

作者：

THANAILAKIS, A ^{[1
]}

RASUL, A ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,POB 88,MANCHESTER M60 1QD,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1976年 / 9卷 / 02期

关键词：

D O I：

10.1088/0022-3719/9/2/019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：337 / 343

页数：7

共 18 条

[1]

ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[3]

BETHE HA, 1942, MIT4312 RAD LAB REP

[4] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[5] PHOTOEMISSION STUDIES OF ELECTRONIC STRUCTURE OF TRANSITION METALS [J].

EASTMAN, DE .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (03) :1387-&

[6] PHOTOELECTRIC WORK FUNCTIONS OF TRANSITION, RARE-EARTH, AND NOBLE METALS [J].

EASTMAN, DE .

PHYSICAL REVIEW B, 1970, 2 (01) :1-&

[7] ELECTRONIC DENSITIES OF STATES FROM X-RAY PHOTOELECTRON SPECTROSCOPY [J].

FADLEY, CS ;

SHIRLEY, DA .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1970, A 74 (04) :543-+

[8] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[9] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

[10]

Milnes A., 1973, DEEP IMPURITIES SEMI

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