TIGHT-BINDING VIEW OF ALLOY SCATTERING IN III-V TERNARY SEMICONDUCTING ALLOYS

被引：29

作者：

FEDDERS, PA ^{[1
]}

MYLES, CW ^{[1
]}

机构：

[1] TEXAS TECH UNIV,DEPT PHYS & ENGN PHYS,LUBBOCK,TX 79409

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.29.802

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：802 / 807

页数：6

共 45 条

[1] UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J].

ALLEN, RE ;

DOW, JD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :383-387

[2] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J].

ALLEN, RE ;

DOW, JD .

PHYSICAL REVIEW B, 1982, 25 (02) :1423-1426

[3] THEORY OF DEEP TRAPS AT SEMICONDUCTOR INTERFACES [J].

ALLEN, RE ;

BUISSON, JP ;

DOW, JD .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :975-976

[4] ELECTRONIC-ENERGY LEVELS OF POINT-DEFECTS AT THE GASB (110) SURFACE [J].

ALLEN, RE ;

DOW, JD ;

HJALMARSON, HP .

SOLID STATE COMMUNICATIONS, 1982, 41 (05) :419-422

[5]

ALLEN RE, 1981, SURF SCI, V110, pL625, DOI 10.1016/0039-6028(81)90633-6

[6] THEORY OF FRENKEL CORE EXCITONS AT SURFACES [J].

ALLEN, RE ;

DOW, JD .

PHYSICAL REVIEW B, 1981, 24 (02) :911-914

[7]

ALLEN RE, UNPUB APPL SURF SCI

[8]

ALLEN RE, 1980, INT J QUANTUM CHEM S, V14, P607

[9]

BROOK H, UNPUB

[10] ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS ALXGA1-XAS,GAPXAS1-X, AND GAXIN1-XP [J].

CHEN, AB ;

SHER, A .

PHYSICAL REVIEW B, 1981, 23 (10) :5360-5374

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