VOLTAGE DEPENDENCE OF BARRIER HEIGHT IN AIN TUNNEL JUNCTIONS - (PHOTOEMISSION - ROOM TEMPERATURE - E)

被引:21
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LEWICKI, GW
MEAD, CA
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10.1063/1.1754505
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O59 [应用物理学];
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BRAUNSTEIN, AI ;
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APPLIED PHYSICS LETTERS, 1966, 8 (04) :95-+
[2]  
BRAUNSTEIN AI, 1965, PHYS REV LETT, V14, P7
[3]   BARRIER HEIGHT STUDIES ON METAL-SEMICONDUCTOR SYSTEMS [J].
SPITZER, WG ;
MEAD, CA .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) :3061-+