RADIATION-HARDENED CMOS-SOS LSI CIRCUITS

被引:12
作者
AUBUCHON, KG
PETERSON, HT
SHUMAKE, DP
机构
[1] HUGHES AIRCRAFT CO,NEWPORT BEACH,CA 92663
[2] HUGHES AIRCRAFT CO,EL SEGUNDO,CA 90009
关键词
D O I
10.1109/TNS.1976.4328550
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1613 / 1616
页数:4
相关论文
共 3 条
[1]   RADIATION HARDENED CMOS-SOS [J].
AUBUCHON, KG ;
HARARI, E .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2181-2184
[2]   DESIGN OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J].
FOSSUM, JG ;
DERBENWICK, GF ;
GREGORY, BL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2208-2213
[3]   INVESTIGATION OF RADIATION EFFECTS AND HARDENING PROCEDURES FOR CMOS-SOS [J].
PEEL, JL ;
PANCHOLY, RK ;
KUHLMANN, GJ ;
OKI, TJ ;
WILLIAMS, RA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2185-2189