ELECTRONIC QUENCHING OF THE B2-SIGMA+ STATE OF ALO

被引：8

作者：

CAMPBELL, ML ^{[1
]}

MCCLEAN, RE ^{[1
]}

GARLAND, NL ^{[1
]}

NELSON, HH ^{[1
]}

机构：

[1] USN,RES LAB,DIV CHEM,WASHINGTON,DC 20375

来源：

CHEMICAL PHYSICS LETTERS | 1992年 / 194卷 / 03期

关键词：

D O I：

10.1016/0009-2614(92)85532-F

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electronic quenching rate constants for the B2-SIGMA+ state of AlO were determined using a pulsed-laser photolysis laser-induced fluorescence technique by examining fluorescence decay rates in the presence of seven atomic and molecular collision partners. The two polar molecules CO and NO were found to have rate constants of 4.8 x 10(-12) and 1.8 x 10(-10) cm3 s-1, respectively. The nonpolar gases He, H2, N2, CO2 and Xe were found to be poor quenchers with a bimolecular quenching rate constant having an upper bound of 1 X 10(-13) cm3 s-1 for He, H-2, N2 and Xe and 1 x 10(-12) cm3 for CO2.

引用

页码：187 / 190

页数：4

共 20 条

[1]

AUTHIER B, 1964, ANN GEOPHYS, V20, P353

[2]

AUTHIER B, 1964, ANN GEOPHYS, V20, P342

[3] TEMPERATURE-DEPENDENCE OF THE ELECTRONIC-TO-VIBRATIONAL QUENCHING RATE CONSTANTS OF NF(B1-SIGMA-+) [J].