A SINGULAR PERTURBATION ANALYSIS OF REVERSE-BIASED SEMICONDUCTOR DIODES

被引：20

作者：

BREZZI, F

CAPELO, ACS

GASTALDI, L

机构：

[1] CNR,IST ANAL NUMER,PAVIA,ITALY

[2] UNIV PADUA,DIPARTIMENTO SCI STAT,I-35100 PADUA,ITALY

[3] UNIV TRENT,DIPARTIMENTO MATEMAT,TRENTO,ITALY

来源：

关键词：

D O I：

10.1137/0520024

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

引用

页码：372 / 387

页数：16

共 11 条

[1]

BANK RE, 1982, 5TH P INT C COMP MET

[2]

BREZZI F, 1986, MAT APL COMPUT, V5, P123

[3]

BREZZI F, 1986, LECT NOTES MATH, V1230, P191

[4]

BREZZI F, 1985, 7TH P INT S COMP MET

[5]

CAFFARELLI LA, 1987, B UNIONE MAT ITAL B1, V7, P409

JEROME, JW .

[7]

Kurata M., 1982, NUMERICAL ANAL SEMIC

[8]

Markowich P. A., 1986, STATIONARY SEMICONDU, DOI [10.1007/978-3-7091-3678-2, DOI 10.1007/978-3-7091-3678-2]

[9]

MARKOWICH PA, IN PRESS INITIAL TRA

[10]

Mock M., 1983, ANAL MATH MODELS SEM