DEPENDENCE OF G-FACTOR ON ELECTRON-CONCENTRATION IN CADMIUM ARSENIDE AT LOW-TEMPERATURES

被引:8
作者
JAYGERIN, JP
LAKHANI, AA
机构
[1] UNIV SHERBROOKE,RECH SEMICONDUCTEURS & DIELECTR GRP,SHERBROOKE J1K 2R1,QUEBEC,CANADA
[2] UNIV SHERBROOKE,DEPT PHYS,SHERBROOKE J1K 2R1,QUEBEC,CANADA
关键词
D O I
10.1007/BF00658953
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:15 / 20
页数:6
相关论文
共 12 条
[1]   NON-PARABOLIC CONDUCTION BAND IN CD3AS2 [J].
ARMITAGE, D ;
GOLDSMID, HJ .
PHYSICS LETTERS A, 1968, A 28 (02) :149-&
[2]  
AUBIN MJ, 1976, 13 P INT C PHYS SEM
[3]   ON CONDUCTION BAND STRUCTURE AND SCATTERING MECHANISM IN CD3AS2 [J].
BLOM, FAP ;
SCHRAMA, JT .
PHYSICS LETTERS A, 1969, A 30 (04) :245-&
[4]   MAGNETIC SUSCEPTIBILITY OF INSB [J].
BOWERS, R ;
YAFET, Y .
PHYSICAL REVIEW, 1959, 115 (05) :1165-1172
[5]  
CARON LG, TO BE PUBLISHED
[6]  
DOI H, 1969, SCI REP RES TOHOKU A, V20, P190
[7]  
GROVES SH, 1971, J PHYS CHEM SOLIDS S, V1, P447
[8]  
HAIDEMEN.ED, 1966, J PHYS SOC JPN, VS 21, P189
[9]   SPIN MAGNETIC MOMENT AND SPIN RESONANCE OF CONDUCTION ELECTRONS IN ALPHA-SN-TYPE SEMICONDUCTORS [J].
KACMAN, P ;
ZAWADZKI, W .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 47 (02) :629-&