DARK CURRENT ANALYSIS OF INSB PHOTODIODES

被引：24

作者：

HOPKINS, FK ^{[1
]}

BOYD, JT ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT ELECT & COMP ENGN,SOLID STATE ELECTR LAB,CINCINNATI,OH 45221

来源：

INFRARED PHYSICS | 1984年 / 24卷 / 04期

关键词：

D O I：

10.1016/0020-0891(84)90031-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：391 / 395

页数：5

共 13 条

[1] BAGATYREV VA, 1978, SOV PHYS SEMICOND+, V12, P1256
[2] BAILEY GC, 1981, P SOC PHOTOOPT INSTR, V311
[3] SURFACE LEAKAGE CURRENT IN SILICON FUSED JUNCTION DIODES
CUTLER, M
BATH, HM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (01): : 39 - 43
[4] IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING
FORREST, SR
LEHENY, RF
NAHORY, RE
POLLACK, MA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 322 - 325
[5] HOPKINS FK, 1983, THESIS U CINCINNATI
[6] Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11
[7] AN INVESTIGATION OF INVERSION LAYER INDUCED LEAKAGE CURRENT IN ABRUPT P-N JUNCTIONS
INKSON, JC
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1167 - &
[8] KRUSE PW, 1970, SEMICONDUCT SEMIMET, V5, P15
[9] EFFECTS OF ELECTRONS AND HOLES ON TRANSITION LAYER CHARACTERISTICS OF LINEARLY GRADED P-N JUNCTIONS
SAH, CT
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (03): : 603 - &
[10] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489