DEPENDENCE OF LEAD CHALCOGENIDE DIODE-LASER RADIATION ON LATTICE MISFIT INDUCED STRESS

被引：6

作者：

BOTTNER, H

SCHIESS, U

TACKE, M

机构：

[1] Fraunhofer-Institut fuer Physikalische Messtechnik, D-7800 Freiburg

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1990年 / 7卷 / 02期

关键词：

D O I：

10.1016/0749-6036(90)90121-M

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Lead chalcogenide diode lasers were fabricated with PbSe as active layer and different confinement layers consisting of PbS, (PbEu)Se and (PbSr)Se. For PbS confinement layers a red shift in the emission frequency was found, for the other confinement layer types a blue shift was observed. These shifts can be explained by lattice misfit induced strain. © 1990.

引用

页码：97 / 102

页数：6

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