CHARGE-TRANSFER ACROSS THE AS/SI(100)-2X1 INTERFACE

被引:44
作者
EVANS, JA
LAINE, AD
WEIGHTMAN, P
MATTHEW, JAD
WOOLF, DA
WESTWOOD, DI
WILLIAMS, RH
机构
[1] UNIV LIVERPOOL,SURFACE SCI RES CTR,LIVERPOOL L69 3BX,ENGLAND
[2] UNIV YORK,DEPT PHYS,YORK YO1 5DD,N YORKSHIRE,ENGLAND
[3] UNIV WALES COLL CARDIFF,DEPT PHYS,CARDIFF,WALES
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 03期
关键词
D O I
10.1103/PhysRevB.46.1513
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A high-performance Auger spectrometer has been used to separate the bulk and interface contributions to the Auger spectra of the As/Si(100) interface. Combining these results with measurements of the photoelectron spectra of core levels shows that the Auger-parameter shifts between atoms at the interface and in the bulk elements are -0.64 +/- 0.04 eV for As and 0.68 +/- 0.04 eV for Si. The Auger-parameter shifts are analyzed in terms of recent theoretical models that indicate that there is a small charge transfer of approximately 0.2e from Si to As at the interface.
引用
收藏
页码:1513 / 1520
页数:8
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