INFLUENCE OF OXYGEN INCORPORATION ON BERYLLIUM-DOPED INGAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

LECORRE, A ^{[1
]}

CAULET, J ^{[1
]}

GAUNEAU, M ^{[1
]}

LOUALICHE, S ^{[1
]}

LHARIDON, H ^{[1
]}

LECROSNIER, D ^{[1
]}

ROIZES, A ^{[1
]}

DAVID, JP ^{[1
]}

机构：

[1] CTR ETUD & RECH TOULOUSE,F-31055 TOULOUSE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 20期

关键词：

D O I：

10.1063/1.98566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1597 / 1599

页数：3

共 8 条

[1] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

ILEGEMS, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1278-1287

[2]

LAMBERT M, UNPUB

[3] RESIDUAL DEFECT CENTER IN GAINAS/INP FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LOUALICHE, S ;

GAUNEAU, A ;

LECORRE, A ;

LECROSNIER, D ;

LHARIDON, H .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1361-1363

[4]

PEARSALL TP, 1980, 8TH INT S GAAS REL C, P639

[5] EFFECT OF OXYGEN ON IN0.53GA0.47AS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

STALL, RA ;

WUNDER, RJ ;

SWAMINATHAN, V ;

COX, HM .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :518-520

[6] LPE GROWTH TECHNIQUES FOR FABRICATING ABRUPT ZINC-DOPED AND MAGNESIUM-DOPED P+-N INGAASP/INP HETEROJUNCTIONS [J].

TABATABAIEALAVI, K ;

MARKUNAS, RJ ;

FONSTAD, CG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2085-2088

[7]

TAKEDA Y, 1983, J CRYST GROWTH, V66, P475

[8] MAGNESIUM-DOPING AND CALCIUM-DOPING BEHAVIOR IN MOLECULAR-BEAM EPITAXIAL-III-V COMPOUNDS [J].

WOOD, CEC ;

DESIMONE, D ;

SINGER, K ;

WICKS, GW .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4230-4235

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