EXCITED-STATE SPECTROSCOPY OF CONFINED SHALLOW DONOR IMPURITIES IN A MULTI-QUANTUM-WELL

被引：13

作者：

GRIMES, RT

STANAWAY, MB

CHAMBERLAIN, JM

DUNN, JL

HENINI, M

HUGHES, OH

HILL, G

机构：

[1] Dept. of Phys., Nottingham Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 04期

关键词：

D O I：

10.1088/0268-1242/5/4/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The far infrared (FIR) photoconductive response of silicon-doped GaAs/AlGaAs multi-quantum wells (MQWS) at 4.2 K reveals evidence of several transitions from the ground state to higher excited states of the confined impurity (e.g. 1s-3d+1, 1s-3p+1, 1s-3d+2, 1s-4d+2 etc.). Assignments are made by comparison with the bulk case and with available theory. Linewidths of the 1s-2p+ transition indicate that in the most favourable case minimum redistribution of the silicon dopant occurs which permits observation of higher state transitions.

引用

页码：305 / 307

页数：3

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