STRIPED-SUBSTRATE DOUBLE-HETEROSTRUCTURE LASERS

被引：27

作者：

BURNHAM, RD ^{[1
]}

SCIFRES, DR ^{[1
]}

TRAMONTANA, JC ^{[1
]}

ALIMONDA, AS ^{[1
]}

机构：

[1] XEROX CORP,CTR RES,PALO ALTO,CA 94304

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1975年 / QE11卷 / 07期

关键词：

D O I：

10.1109/JQE.1975.1068674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：418 / 420

页数：3

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[J]. SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1279 - 1281
[2] CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) : 5021 - 5028
[3] REPRODUCIBLE LIQUID-PHASE-EPITAXIAL GROWTH OF DOUBLE HETEROSTRUCTURE GAAS-ALXGA1-XAS LASER-DIODES
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[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2817 - &
[4] INTERNALLY STRIPED PLANAR LASER WITH 3-MU-M STRIPE WIDTH OSCILLATING IN TRANSVERSE SINGLE-MODE
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TAKAGI, N
ISHIKAWA, H
TAKANASHI, H
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (12) : 1758 - 1759
[5] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE PLANAR STRIPE LASER
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UENO, M
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) : 1585 - 1592