ANALYSIS OF TRANSIENT RADIATION UPSET IN A 2K SRAM

被引:22
作者
MASSENGILL, LW [1 ]
DIEHLNAGLE, SE [1 ]
WROBEL, TF [1 ]
机构
[1] SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
关键词
D O I
10.1109/TNS.1985.4334062
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:4026 / 4030
页数:5
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