BAND-GAP AND STRUCTURAL PARAMETER VARIATION OF CUINSE2(1-X)S2X SOLID-SOLUTION IN THE FORM OF THIN-FILMS

被引：16

作者：

TEMBHURKAR, YD

HIRDE, JP

机构：

[1] Department of Physics, Institute of Science, Nagpur

来源：

BULLETIN OF MATERIALS SCIENCE | 1992年 / 15卷 / 02期

关键词：

TERNARY SEMICONDUCTOR COMPOUNDS; SPRAY PYROLYSIS; CHALCOPYRITE STRUCTURE;

D O I：

10.1007/BF02927439

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuInSe2(1-x)S2x thin films were deposited by spray pyrolysis. Lattice parameters a and c, for all composition parameters X, were calculated from the Phillips X-ray diffractometer. The structure remained tetragonal chalcopyrite throughout. Optical band gap (E(g)) was determined for the composition parameter X from the transmittance study at room temperature. Variation of E(g), a and c with X was found to be linear.

引用

页码：143 / 148

页数：6

共 14 条

[1] PREPARATION AND CHARACTERIZATION OF THE QUATERNARY ALLOY SYSTEM CUGASE2(1-X)TE2X [J].