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THIN-FILMS AND DEVICES OF DIAMOND, SILICON-CARBIDE AND GALLIUM NITRIDE

被引：137
作者：
DAVIS, RF
机构：
[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
来源：
PHYSICA B | 1993年 / 185卷 / 1-4期
关键词：
D O I：
10.1016/0921-4526(93)90210-W
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The extreme properties of diamond, SiC and GaN provide combinations of attributes for high-power, -temperature, -frequency and optoelectronic applications. The methods of deposition, the results of chemical, structural, microstructural and electrical characterization and device development are reviewed for thin films of these three materials. Problems and areas of future research are also noted.
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页码：1 / 15
页数：15
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