INFRARED ABSORPTION IN N-TYPE GAAS

被引：1

作者：

AKASAKI, I

KOBAYASI, H

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1966年 / 21卷 / 07期

关键词：

D O I：

10.1143/JPSJ.21.1451

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1451 / +

页数：1

共 8 条

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[2]

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[7] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE [J].

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PHYSICAL REVIEW, 1959, 114 (01) :59-63

[8] FREE CARRIER ABSORPTION DUE TO POLAR MODES IN THE III-V COMPOUND SEMICONDUCTORS [J].

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