IONIC PHOTOELASTICITY OF GAAS

[1] ELECTRIC-FIELD-INDUCED IONIC CONTRIBUTIONS TO PHOTOELASTICITY OF DIAMOND [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (11): : 2529 - 2547

[2] Anastassakis E. M., 1980, Dynamical properties of solids, vol.4. Disordered solids, optical properties, P157

[3] PRESSURE AND STRESS DEPENDENCE OF REFRACTIVE-INDEX OF TRANSPARENT CRYSTALS [J]. APPLIED OPTICS, 1974, 13 (10): : 2382 - 2396

[4] Cardona M, 1972, ATOMIC STRUCTURE PRO, P514

[5] CARDONA M., 1971, LIGHT SCATTERING SOL, P280

[6] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

[7] DEMEIS WM, 1965, HP15 HARV U TECHN RE

[8] PHOTOELASTIC PROPERTIES OF SELECTED MATERIALS AND THEIR RELEVANCE FOR APPLICATIONS TO ACOUSTIC LIGHT MODULATORS AND SCANNERS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) : 5149 - +

[9] OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1638 - 1645

[10] STRAIN-INDUCED SPLITTING AND OSCILLATOR-STRENGTH ANISOTROPY OF THE INFRARED TRANSVERSE-OPTIC PHONON IN CALCIUM-FLUORIDE, STRONTIUM FLUORIDE, AND BARIUM FLUORIDE [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (02) : 126 - 129

[1] ELECTRIC-FIELD-INDUCED IONIC CONTRIBUTIONS TO PHOTOELASTICITY OF DIAMOND [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (11): : 2529 - 2547

[2] Anastassakis E. M., 1980, Dynamical properties of solids, vol.4. Disordered solids, optical properties, P157

[3] PRESSURE AND STRESS DEPENDENCE OF REFRACTIVE-INDEX OF TRANSPARENT CRYSTALS [J]. APPLIED OPTICS, 1974, 13 (10): : 2382 - 2396

[4] Cardona M, 1972, ATOMIC STRUCTURE PRO, P514

[5] CARDONA M., 1971, LIGHT SCATTERING SOL, P280

[6] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

[7] DEMEIS WM, 1965, HP15 HARV U TECHN RE

[8] PHOTOELASTIC PROPERTIES OF SELECTED MATERIALS AND THEIR RELEVANCE FOR APPLICATIONS TO ACOUSTIC LIGHT MODULATORS AND SCANNERS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) : 5149 - +

[9] OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1638 - 1645

[10] STRAIN-INDUCED SPLITTING AND OSCILLATOR-STRENGTH ANISOTROPY OF THE INFRARED TRANSVERSE-OPTIC PHONON IN CALCIUM-FLUORIDE, STRONTIUM FLUORIDE, AND BARIUM FLUORIDE [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (02) : 126 - 129