VALLEY MIXING IN GAAS/ALAS MULTILAYER STRUCTURES IN THE EFFECTIVE-MASS METHOD

被引：66

作者：

FU, Y ^{[1
]}

WILLANDER, M ^{[1
]}

IVCHENKO, EL ^{[1
]}

KISELEV, AA ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.47.13498

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We introduce a set of boundary conditions for electron envelope functions at GaAs/AlAs heterointerfaces so as to take into account GAMMA-X(z) and X(x)-X(y) valley mixings in the effective-mass method. The proposed conditions enable one to obtain the dependence of the mixing effect upon the parity of monolayer numbers in AlAs and GaAs layers, in agreement with the empirical model calculations. The tunneling probability across a two-interfarce structure GaAs(AlAs)MGaAs(001) is calculated as a function of the GAMMA-electron energy. The electron transfer is shown to depend essentially on the parity of M. An analytical solution is obtained for the dispersion of mixed X(xy) minibands. Direct optical transitions are allowed between these minibands in the in-plane light polarization. The corresponding far-infrared absorption coefficient is calculated and estimated.

引用

页码：13498 / 13507

页数：10

共 18 条

[1]

ALEINER IA, 1993, FIZ TEKH POLUPROV, V27, P594

[2] CONNECTION OF ENVELOPE FUNCTIONS AT SEMICONDUCTOR HETEROINTERFACES .2. MIXINGS OF GAMMA-VALLEYS AND CHI-VALLEYS IN GAAS/ALXGA1-XAS [J].