PROPERTIES OF TITANIUM LAYERS DEPOSITED BY COLLIMATION SPUTTERING

被引：6

作者：

HARA, T ^{[1
]}

NOMURA, T ^{[1
]}

MOSLEY, RC ^{[1
]}

SUZUKI, H ^{[1
]}

SONE, K ^{[1
]}

机构：

[1] APPL MAT JAPAN,NARITA,CHIBA 286,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.579159

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin Ti films are deposited by collimation sputtering. Resistivity is around 80 muOMEGA cm in the as-deposited collimation film. This value does not decrease with the increase of sputtering power and of deposition rate, and is higher than that of 60-65 muOMEGA cm in film by conventional sputtering. Strongly (002) oriented Ti film is deposited in conventional sputtering. However, weak (002) and (101) peaks appear in films by collimation sputtering. X-ray intensity ratio, I(002)/[I(002)+I(101)], indicating the grain growth of preferential Ti(002), does not increase to 0.93 attained in the conventional sputtering with increasing power.

引用

页码：506 / 508

页数：3